Dia: 2-6 inch
Thickness: Standard/Custom
Type: N/P Type
Orientation: 100 / 111
Resistivity: Custom
Surface: Single side polished / Double side polished
TTV: < 5 um
Bow/Warp: <30 um" />
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Prime Grade silicon wafer

Update time:2017-06-02 19:06:09The number of clicks: 12426
● General Specification
Dia: 2-6 inch
Thickness: Standard/Custom
Type: N/P Type
Orientation: 100 / 111
Resistivity: Custom
Surface: Single side polished / Double side polished
TTV: < 5 um
Bow/Warp: <30 um
Related introduction

        

Parameter

Prime grade

Diameter

2’’±0.008’’

3’’±0.008’’

4’’±0.008’’

5’’±0.008’’

6’’±0.008’’

Thickness

279±20um (Stranard)

381±20um (Stranard)

525±20um (Stranard)

279±20um (Stranard)

279±20um (Stranard)

TTV

<5um

<5um

<5um

<5um

<5um

BOW

<38um

<30um

<30um

<30um

<30um

WARP

<38um

<30um

<30um

<30um

<30um

Edge Rounding

SEMI-STD

Marking

Primary SEMI-flat only ,SEMI-STD Flats


Parameter

Characteristic

Type/Dopant

P, Boron; N, Phosphorous; N, Antimony;N, Arsenic

Orientation

<100>,<111>

Slice off orientations per customer’s specifications

Oxygen Content

10-19 ppmA

Custom tolerances per customer’s specification

Carbon Content

0.6 ppmA

Resistivity ranges

- P, Boron

- N, Phosphorous

- N, Antimony

- N, Arsenic

0.001-50 ohm.cm

0.1-40 ohm.cm

0.005-0.025 ohm.cm

0.005 ohm.cm

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